preliminary tsm 05n03 30v n-channel mosfet 1/4 version: preliminary sot - 223 product summary v ds (v) r ds(on) (m ) i d (a) 30 60 @ v gs =10v 5 90 @ v gs =4.5v 3.8 features advance trench process technology high density cell design for ultra low on-resistan ce application load switch pa switch ordering information part no. package packing TSM05N03cw rp sot-223 2.5kpcs / 13 reel absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 5 a pulsed drain current i dm 20 a continuous source current (diode conduction) a,b i s 1.7 a maximum power dissipation ta = 25 o c p d 3 w ta = 75 o c 1.1 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 15 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 45 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on a 1 in 2 pad of 2oz cu, t 5 sec. block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
preliminary tsm 05n03 30v n-channel mosfet 2/4 version: preliminary electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 30 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1 -- 3 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 30v, v gs = 0v i dss -- -- 1.0 a on-state drain current v ds =5v, v gs = 10v i d(on) 5 -- -- a drain-source on-state resistance v gs = 10v, i d = 5a r ds(on) -- 46 60 m v gs = 4.5v, i d = 3.8a -- 70 90 forward transconductance v ds = 10v, i d = 5a g fs -- 5 -- s diode forward voltage i s = 2.5a, v gs = 0v v sd -- -- 1.2 v dynamic b total gate charge v ds = 10v, i d = 5a, v gs = 5v q g -- 4.2 7 nc gate-source charge q gs -- 1.9 -- gate-drain charge q gd -- 1.35 -- input capacitance v ds = 15v, v gs = 0v, f = 1.0mhz c iss -- 555 -- pf output capacitance c oss -- 120 -- reverse transfer capacitance c rss -- 60 -- switching b.c turn-on delay time v dd = 10v, r l = 15 , i d = 1a, v gen = 10v, r g = 6 t d(on) -- 4.2 5.5 ns turn-on rise time t r -- 19 25 turn-off delay time t d(off) -- 13 17 turn-off fall time t f -- 9 12 notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
preliminary tsm 05n03 30v n-channel mosfet 3/4 version: preliminary sot-223 mechanical drawing sot-223 dimension dim millimeters inches min max min max a 6.350 6.850 0.250 0.270 b 2.900 3.100 0.114 0.122 c 3.450 3.750 0.136 0.148 d 0.595 0.635 0.023 0.025 e 4.550 4.650 0.179 0.183 f 2.250 2.350 0.088 0.093 g 0.835 1.035 0.032 0.041 h 6.700 7.300 0.263 0.287 i 0.250 0.355 0.010 0.014 j 10 16 10 16 k 1.550 1.800 0.061 0.071
preliminary tsm 05n03 30v n-channel mosfet 4/4 version: preliminary notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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